4 comments

  • kibibu17 minutes ago
    &gt; At Bell Labs, Muller and fellow scientist Glen Wilk ’90, who is now vice president of technology at ASM, tried replacing silicon dioxide - the prevailing gate material, which leaked too much current at small scales – with hafnium oxide.<p>They are naming professors like &quot;Now That&#x27;s What I Call Music&quot; albums now?<p>(I genuinely can&#x27;t find why there&#x27;s a &#x27;90 there, suspect it&#x27;s a copy&#x2F;paste error?)
    • bsder8 minutes ago
      Presumably because he is a Cornell alumnus from 1990. The article is at cornell.edu .
  • loopback_device1 hour ago
    Original article: <a href="https:&#x2F;&#x2F;www.nature.com&#x2F;articles&#x2F;s41467-026-69733-1" rel="nofollow">https:&#x2F;&#x2F;www.nature.com&#x2F;articles&#x2F;s41467-026-69733-1</a>
  • 0xDEFACED1 hour ago
    any hope that this could be applied to improving memory fab yields and ease some of the capacity constraints on consumer devices? asking for a friend
    • lovich1 hour ago
      Less likely than just inducing more demand from the AI firms